An Efficient GFET Structure

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, simulated including a full 2D Poisson equation and drift-diffusion model with mobilities deduced by direct numerical solution semiclassical Boltzmann equations for charge transport suitable discontinuous Galerkin approach. The critical issue in transistor difficulty fixing off state which requires an accurate calibration gate voltages. In present paper we propose simulate structure has well-behaved characteristic curves similar to those conventional (with gap) semiconductor materials. introduced device clear region can be prototype devices suited post-silicon nanoscale electron technology. specific geometry overcomes problems triggering minority current gives viable way design based on large as substitute standard semiconductors area. good behavior versus voltage makes very promising challenging case experimentalists.